ICE15N73FP

Preliminary Data Sheet ICE15N73FP ICE15N73FP N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 15A 730V 0.25Ω 82nC D G S Max Min Typ Typ ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b , at Tj=25oC, unless otherwise specified T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Parameter Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.5A 15 A 35 A 280 mJ Avalanche current, repetitive I AR limited by Tjmax 7.5 A MOSFET dv/dt ruggedness dv/dt VDS=480V, ID=15A, Tj=125oC 50 V/ns Gate source voltage static VGS AC (f>1Hz) ±20 ±30 V Power dissipation Operating and storage temperature Mounting torque Ptot Tj, Tstg Tc=25°C M 2.5 screws 65 -55 to +150 50 W oC Ncm a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change SP-15N73FP-000-0 08/07/2013 1 Preliminary...