MMDFS6N303R2

MMDFS6N303 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8, FETKYt The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck−Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. Features Power MOSFET with Low VF Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive — Can be Driven by Logic ICs Mounting Information for SO−8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (2500 units/13″ reel) Marking: 6N303 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage — Continuous Drain Current (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp v 10 ms) Total Power Dissipation @ TA = 25°C (Note 2) Symbol VDSS VDGR VGS ID IDM PD Value 30 30 "20 6.0 30 2.0 Unit Vdc Vdc Vdc Adc Apk Watts Single Pulse Drain−to−Source Avalanche Energy — Startin TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 2...