Document
EFC4618R-P
Power MOSFET
24V, 6A, 23mΩ, Dual N-Channel
www.onsemi.com
Features
• 2.5V Drive • Best Suited for LiB Charging and Discharging Switch • Common-drain Type • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature
Symbol
VSSS VGSS IS ISP PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm)
Ratings 24
±12 6
60 1.6 150 --55 to +150
Unit V V A A W °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ) 7069-001
1.81 43
EFC4618R-P-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TR
Marking
0.65 1.81 0.15 0.22 0.37
12
0.65 12 43
0.3
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
EFCP1818-4CC-037
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014 October 2014 - Rev. 2
1
TR
Electrical Connection 1
Rg
2
Rg
3
Rg=200Ω
4
FT
LOT No.
Publication Order Number : EFC4618R-P/D
EFC4618R-P
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage
V(BR)SSS ISSS IGSS VGS(off) | yfs | RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 RSS(on)5 td(on) tr td(off) tf Qg
VF(S-S)
IS=1mA, VGS=0V VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5
See specified Test Circuit. Test Circuit 7
VSS=10V, VGS=4.5V, IS=6A
IS=3A, VGS=0V
Test Circuit 6
min 24
Ratings typ
0.5
13.5 14
14.5 14.9 18.5
6.5 19.8 20.5
21 23 27 200 815 1840 1770 25.4 0.76
max
1 ±10 1.3
23 24 25.5 30 35
1.2
Unit
V mA mA V S mW mW mW mW mW ns ns ns ns nC V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device EFC4618R-P-TR
Package EFCP
Shipping 5,000pcs./reel
memo Pb-Free and Halogen Free
Test circuits are example of measuring FET1 side Test Circui.