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EFC4618R-P Dataheets PDF



Part Number EFC4618R-P
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet EFC4618R-P DatasheetEFC4618R-P Datasheet (PDF)

EFC4618R-P Power MOSFET 24V, 6A, 23mΩ, Dual N-Channel www.onsemi.com Features • 2.5V Drive • Best Suited for LiB Charging and Discharging Switch • Common-drain Type • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch .

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EFC4618R-P Power MOSFET 24V, 6A, 23mΩ, Dual N-Channel www.onsemi.com Features • 2.5V Drive • Best Suited for LiB Charging and Discharging Switch • Common-drain Type • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7069-001 1.81 43 EFC4618R-P-TR Product & Package Information • Package : EFCP • JEITA, JEDEC :- • Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TR Marking 0.65 1.81 0.15 0.22 0.37 12 0.65 12 43 0.3 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 EFCP1818-4CC-037 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October 2014 - Rev. 2 1 TR Electrical Connection 1 Rg 2 Rg 3 Rg=200Ω 4 FT LOT No. Publication Order Number : EFC4618R-P/D EFC4618R-P Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Source-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage V(BR)SSS ISSS IGSS VGS(off) | yfs | RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 RSS(on)5 td(on) tr td(off) tf Qg VF(S-S) IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.7V IS=3A, VGS=3.1V IS=3A, VGS=2.5V Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 See specified Test Circuit. Test Circuit 7 VSS=10V, VGS=4.5V, IS=6A IS=3A, VGS=0V Test Circuit 6 min 24 Ratings typ 0.5 13.5 14 14.5 14.9 18.5 6.5 19.8 20.5 21 23 27 200 815 1840 1770 25.4 0.76 max 1 ±10 1.3 23 24 25.5 30 35 1.2 Unit V mA mA V S mW mW mW mW mW ns ns ns ns nC V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device EFC4618R-P-TR Package EFCP Shipping 5,000pcs./reel memo Pb-Free and Halogen Free Test circuits are example of measuring FET1 side Test Circui.


CPH6635 EFC4618R-P MCH3382


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