Dual N-Channel MOSFET
DESCRIPTION
The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
Description
DESCRIPTION
The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 40V,ID =6A RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
SSF4624
40V Dual N-Channel MOSFET
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF4624
SSF4624
SOP-8
Ø330mm
SOP-8 Top View
Tape Width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
40 ±20
6 5 20 2 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250μA VDS=32V,VGS=0V
Min Typ Max Unit
40 V 1 μA
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Rev.1.0
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-S...
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