SSF6007

Main Product Characteristics: SSF6007 VDSS -50V RDS(on) 2.1ohm(typ.) 6007 ID -130mA Features and Benefits: SOT-23 Marking and pin Assignment Schematic diagram  Advanced MOSFET process technology  Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS ESD TJ TSTG Parameter Continuous Drain Current, VGS @ -10V① Continuous Drain Current, VGS @ -10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage ESD Rating (HBM module) Operating Junction and Storage Temperature Range Thermal Resistance Max. -130 -100 -520 230 -50 ± 20 1 -55 to + 150 Symbol Characterizes Typ. Max. Junction-to-ambient (t ≤ 10s) ④ RθJA — 556 Junction-to-Ambient (PCB mounted, steady-state) ④ — 540 Units mA mW V V KV °C Units ℃/W ℃/W ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 1 of 6 SSF6007 Electrical Characterizes @TA=25℃ u...