SSF6072G5

Main Product Characteristics SSF6072G5 60V N-Channel MOSFET VDSS RDS(on) 60V 67mΩ (typ.) 6072SSF6072G5 ID 4A Features and Benefits SOT-223 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for DC-DC and DC-AC converters, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in DC-DC and DC-AC converters and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Thermal Resistance Max. 4 3 16 3.3 60 ± 20 15 10 -55 to +175 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — Max. 38 35 Units A W V V mJ A °C Units ℃/W ℃/W www.goodark.com Page 1 of 7 Rev.1.1 SSF6072G5 60V N-Channel MOSFET Electrical ...