SSF6092G1

Main Product Characteristics: VDSS RDS(on) ID 60V 70mΩ(typ) 2.7A SOT23 SSF6092G1 Marking and pin Assignment Schematic diagram Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 2.7 ① 10.8 1.25 0.01 60 ±20 -55 to + 150 Units A W W/°C V V °C ©Silikron Semiconductor CO.,LTD. 2012.02.01 www.silikron.com Version : 1.0 page 1 of 7 Thermal Resistance Symbol Characterizes Junction-to-Ambient (t ≤ 10s)④ RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ SSF6092G1 Typ. — — Max. 99 100 Units ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Param...