SSF3056C

Main Product Characteristics SSF3056C 30V Complementary MOSFET (Preliminary) NMOS PMOS VDSS 30V -30V RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A D1 S1 NMOS D1 G1 D2 S2 PMOS D2 G2 DFN2X3-8L Schematic Diagram Features and Benefits  Advanced trench MOSFET process technology  Special designed for buck-boost circuit, DSC, portable devices and general purpose applications  Ultra low on-resistance with low gate charge  150℃ operating temperature  Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications. Absolute Max Rating Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Continuous Drain Current, VGS @ 4.5V① Continuous Drain Current, VGS @ 4.5V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. N-channel P-channel 5 -4.5 4.2 -3.4 18.8 -12.5 2.1 1.8 30 -30 ± 12 ± 12 -55 to + 150 -55 to + 150 Units A W V V °C www.goodark.com Page 1 of 5 Rev.1.0 SSF3056C 30V Complementary MOSFET (Preliminary) Thermal Resistance Symbol Characteristics Junction-to-ambient (t ≤ 10s) ④ RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — Max...