SSF3051G7

Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A Features and Benefits: SOT23-6  Advanced trench MOSFET process technology  Special designed for buttery protection, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3051G7 30V P-Channel MOSFET 3051G7 D G Marking and Pin Assignment S Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. Absolute Max Rating Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.7 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Case(Note 2) RθJA RθJC 75 ℃/W 30 ℃/W www.goodark.com Page 1 of 8 Rev.1.0 SSF3051G7 30V P-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Curre...