N-Channel MOSFET
DESCRIPTION
The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
Description
DESCRIPTION
The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
SSF3420
30V N-Channel MOSFET
D G
S Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
SOT23-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3420
SSF3420
SOT23-6
Ø180mm
Tape Width 8mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30 ±20 6.3 4.8 20 1.6 -55 To 150
Unit
V V
A
A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
78 ℃/W
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Page 1 of 6
Rev.2.0
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
SSF3420
30V N-Channel MOSFET
Min Typ Max Unit
30 V
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-St...
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