SSF3056C

Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 37mohm(typ.) 68mohm(typ.) D1 NMOS S1 D1 G1 D2 S2 PMOS D2 G2 ID 5A Features and Benefits: -4.5A DFN2X3-8L Bottom View  Advanced trench MOSFET process technology  Special designed for buck-boost circuit, DSC, portable devices and general purpose applications  Ultra low on-resistance with low gate charge  150℃ operating temperature SSF3056C Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications Absolute max Rating: Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Continuous Drain Current, VGS @ 4.5V① Continuous Drain Current, VGS @ 4.5V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. N-channel P-channel 5 -4.5 4.2 -3.4 18.8 -12.5 2.1 1.8 30 -30 ±12 ±12 -55 to + 150 -55 to + 150 Units A W V V °C ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary page 1 of 6 Thermal Resistance Symbol Characterizes Junction-to-ambient (t ≤ 10s) ④ RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ SSF3056C Max. Typ. N-channel P-channel —...