SSF3611E

                                 Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits: SOP-8  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3611E    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -12 -7.4 -48 2 -30 ± 20 -55 to +150 Units A W V V °C Thermal Resistance Symbol Characterizes RθJA Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com  Typ. — Max. 62.5 Units ℃/W Version : 1.0 page 1 of 6                                  Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Q...