SSF3639C

SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package N-channel P-channel Schematic diagram Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3639C SSF3639C SOP-8 Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25℃ TA=70℃ ID Pulsed Drain Current (Note 1) IDM Maximum Power Dissipation TA=25℃ TA=70℃ PD Operating Junction and Storage Temperature Range TJ,TSTG N-Channel 30 ±20 6.3 20 1.6 -55 To 150 P-Channel -30 ±20 -5 -20 2.0 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) N-Ch 62.5 RθJA P-Ch ℃/W 62.5 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Min Typ Max Unit ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.1 SSF3639C Drain-Source Breakdown Voltage BVDSS Zero G...