N-Channel enhancement mode power field effect transistors
Main Product Characteristics
VDSS RDS(on)
100V 3.0mΩ (typ.)
ID 180A ①
Features and Benefits
TO-263-7L
Advanced P...
Description
Main Product Characteristics
VDSS RDS(on)
100V 3.0mΩ (typ.)
ID 180A ①
Features and Benefits
TO-263-7L
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSS1004A7
1, Gate 2~3,5~7 Source 4,8 Drain
Pin Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 180 ① 130 ①
670 375 2.5 100 ± 20 1045 83.5 -55 to +175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2014.04.18 www.silikron.com
Version : 1.2
page 1 of 7
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
SSS1004A7
Ty...
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