N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS RDS(on)
60V 34mΩ (typ.)
ID 38A
TO-220
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL6040
Marking and pin Assign...
