N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS RDS(on)
300V 45mΩ(typ.)
ID 50A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSPL50N30H
Marking and ...
