N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS
200V
RDS(on) 0.13ohm(typ.)
ID 18A ①
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL2015
Marking and pin As...
