AP02N60H-HF

Advanced Power Electronics Corp. AP02N60H/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID 600V 8Ω 1.6A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Rating 600 +30 1.6 1 6 39 0.31 64 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 3.2 62.5 110 Data & specifications subject to change without notice Units V V A A A W W/℃ mJ A mJ ℃ ℃ Units ℃/W ℃/W ℃/W 1 200807222 AP02N60H/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VG...