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SML25SCM650N2B

Seme LAB
Part Number SML25SCM650N2B
Manufacturer Seme LAB
Description Silicon Carbide N-Channel Power MOSFET
Published Sep 21, 2016
Detailed Description SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For...
Datasheet PDF File SML25SCM650N2B PDF File

SML25SCM650N2B
SML25SCM650N2B

Overview
SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2%...


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