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LE25S81QE Dataheets PDF



Part Number LE25S81QE
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 8M-bit (1024K x 8) Serial Flash Memory
Datasheet LE25S81QE DatasheetLE25S81QE Datasheet (PDF)

Ordering number : EN*A2269 LE25S81QE Advance Information CMOS LSI 8M-bit (1024K  8) Serial Flash Memory http://onsemi.com Overview The LE25S81QE is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S81QE is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as por.

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Ordering number : EN*A2269 LE25S81QE Advance Information CMOS LSI 8M-bit (1024K  8) Serial Flash Memory http://onsemi.com Overview The LE25S81QE is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S81QE is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S81QE also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity. Function  Read/write operations enabled by single 1.8V power supply : 1.65 to 1.95V supply voltage range  Operating frequency : 40MHz  Temperature range : –40 to +90C  Serial interface : SPI mode 0, mode 3 supported  Sector size : 4K bytes/small sector, 64K bytes/sector  Small sector erase, sector erase, chip erase functions  Page program function (256 bytes / page)  Block protect function  Data retention period : 20 years  Status functions : Ready/busy information, protect information  Highly reliable read/write Number of rewrite times : 100,000 times Small sector erase time : 40ms (typ.), 150ms (max.) Sector erase time : 80ms (typ.), 250ms (max.) Chip erase time : 500ms (typ.), 6.0s (max.) Page program time : 0.3ms/256 bytes (typ.), 0.5ms/256 bytes (max.)  Package : VDFN8 5x6, 1.27P / VSON8T (6x5) * This product is licensed from Silicon Storage Technology, Inc. (USA). This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION See detailed ordering and shipping information on page 23 of this data sheet. Semiconductor Components Industries, LLC, 2013 December, 2013 VDFN8 5x6, 1.27P / VSON8T (6x5) D1813HKPC No.A2269-1/23 LE25S81QE Specifications Absolute Maximum Ratings Parameter Maximum supply voltage DC voltage (all pins) Storage temperature Symbol Tstg Conditions With respect to VSS With respect to VSS Ratings -0.5 to +2.4 -0.5 to VDD+0.5 -55 to +150 unit V V C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Operating Conditions Parameter Operating supply voltage Operating ambient temperature Symbol Write operation Read operation Conditions Ratings 1.65 to 1.95 -40 to +90 -40 to +90 unit V C Allowable DC Operating Conditions Parameter Read mode operating current Write mode operating current (erase+page program) CMOS standby current Power-down standby current Input leakage current Output leakage current Input low voltage Input high voltage Output low voltage Output high voltage Symbol ICCR ICCW ISB IDSB ILI ILO VIL VIH VOL VOH Conditions SCK = 0.1VDD/0.9VDD, HOLD = WP = 0.9VDD, SO = open Single Dual *1 tSSE = tSE = tCHE = typ., tPP = max 30MHz 40MHz 40MHz min Ratings typ max 6 8 10 40 unit mA mA mA mA CS = VDD, HOLD = WP = VDD, SI = VSS/VDD, SO = open CS = VDD, HOLD = WP = VDD, SI = VSS/VDD, SO = open IOL = 100A, VDD = VDD min IOL = 1.6mA, VDD = VDD min IOH = -100A, VDD = VDD min 50 A 15 A 2 A 2 A -0.3 0.7VDD 0.3VDD VDD+0.3 0.2 0.4 V V V VCC-0.2 V *1: Dual Read is not supported on LE25S81QE. Data hold, Rewriting frequency Parameter Rewriting frequency Data hold Conditions Program/Erase Status resister write min 100,000 1,000 20 max unit times/ Sector year Pin Capacitance at Ta = 25C, f = 1MHz Parameter Symbol Conditions Ratings max unit Output pin capacitance CSO VSO = 0V 12 pF Input pin Capacitance CIN VIN = 0V 6 pF Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2269-2/23 AC Characteristics LE25S81QE Parameter Symbol Clock frequency Read instruction (03h) All instructions except for read (03h) Input signal rising/falling time SCK logic high level pulse width 33MHz 40MHz SCK logic low level pulse width CS setup time 33MHz 40MHz CS hold time Data setup time Data hold time CS wait pulse width Output high impedance time from CS Output data time from SCK Output data hold time Output low impedance time from SCK WP setup time WP hold time HOLD setup time HOLD hold time Output low impedance time from HOLD Output high impedance time from HOLD Power-down time Power-down recovery time Write status register time Page programming cycle time 256Byte nByte Small sector erase cycle time Sector erase cycle time Chip erase cycle time fCLK tRF tCLHI tCLLO tCSS tCSH tDS tDH .


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