Document
Ordering number : EN*A2260
LE25S80FD
Advance Information
CMOS LSI
8M-bit (1024K 8) Serial Flash Memory
http://onsemi.com
Overview
The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S80FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S80FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Function
Read/write operations enabled by single 1.8V power supply : 1.65 to 1.95V supply voltage range
Operating frequency
: 40MHz
Temperature range
: –40 to +90C
Serial interface
: SPI mode 0, mode 3 supported
Sector size
: 4K bytes/small sector, 64K bytes/sector
Small sector erase, sector erase, chip erase functions
Page program function (256 bytes / page)
Block protect function
Data retention period
: 20 years
Status functions
: Ready/busy information, protect information
Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ.), 150ms (max.)
Sector erase time
: 80ms (typ.), 250ms (max.)
Chip erase time
: 500ms (typ.), 6.0s (max.)
Page program time
: 0.8ms/256 bytes (typ.), 1.0ms/256 bytes (max.)
Package
: VSOIC8 NB, CASE 753AA
* This product is licensed from Silicon Storage Technology, Inc. (USA).
This document contains information on a new product. Specifications and information herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 23 of this data sheet.
Semiconductor Components Industries, LLC, 2013 December, 2013
VSOIC8 NB
D1813HKPC No.A2260-1/23
LE25S80FD
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Maximum supply voltage DC voltage (all pins) Storage temperature
Symbol Tstg
Conditions With respect to VSS With respect to VSS
Ratings -0.5 to +2.4
-0.5 to VDD+0.5 -55 to +150
unit V V C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Recommended Operating Conditions
Parameter Operating supply voltage Operating ambient temperature
Symbol
Conditions
Ratings 1.65 to 1.95 -40 to +90
unit V C
Allowable DC Operating Conditions
Parameter
Read mode operating current
Write mode operating current (erase+page program) CMOS standby current
Power-down standby current
Input leakage current Output leakage current Input low voltage Input high voltage Output low voltage
Output high voltage
Symbol
Conditions
ICCR ICCW
SCK = 0.1VDD/0.9VDD, HOLD = WP = 0.9VDD, SO = open
Single Dual
tSSE = tSE = tCHE = typ., tPP = max
ISB
IDSB
ILI ILO VIL VIH VOL
VOH
CS = VDD, HOLD = WP = VDD, SI = VSS/VDD, SO = open CS = VDD, HOLD = WP = VDD, SI = VSS/VDD, SO = open
IOL = 100A, VDD = VDD min IOL = 1.6mA, VDD = VDD min IOH = -100A, VDD = VDD min
33MHz 40MHz 40MHz
min
Ratings typ
-0.3 0.7VDD
VCC-0.2
max 6 8
10
15
50
15
2 2 0.3VDD VDD+0.3 0.2 0.4
unit mA mA mA mA
A
A A A V V
V V
Data hold, Rewriting frequency
Parameter Rewriting frequency Data hold
Conditions Program/Erase Status resister write
min 100,000 1,000 20
max
unit times/ Sector
year
Pin Capacitance at Ta = 25C, f = 1MHz
Parameter
Symbol
Conditions
Ratings max
unit
Output pin capacitance
CSO
VSO = 0V
12 pF
Input pin Capacitance
CIN
VIN = 0V
6 pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for
some of the sampled devices.
No.A2260-2/23
AC Characteristics
LE25S80FD
Parameter
Symbol
Clock frequency
Read instruction (03h) All instructions except for read (03h)
Input signal rising/falling time
SCK logic high level pulse width
33MHz 40MHz
SCK logic low level pulse width CS setup time
33MHz 40MHz
CS hold time Data setup time
Data hold time CS wait pulse width Output high impedance time from CS
Output data time from SCK
Output data hold time
Output low impedance time from SCK WP setup time WP hold time
HOLD setup time HOLD hold time Output low impedance time from HOLD Output high impedance time from HOLD
Power-down time
Power-down recovery time
Write status register time
Page programming cycle time
256Byte nByte
Small sector erase cycle time Sector erase cycle time Chip erase cycle time
fCLK
tRF
tCLHI
tCLLO
tCSS tCSH tDS tDH tCPH tCHZ tV tHO tCLZ tWPS tWPH tHS tHH t.