PJX8803

PPJX8803 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.6A SOT-563 Features  RDS(ON) , [email protected], [email protected]<340mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00009 ounces, 0.0026 grams  Marking: X03 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +8 -0.6 -2.4 300 2.4 -55~150 417 UNITS V V A A mW mW/ oC oC oC/W January 22,2015-REV.01 Page 1 PPJX8803 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacit...