Diode
Switching Diodes Silicon Epitaxial Planar
1SS307E
1. Applications
• General-Purpose Rectifiers
2. Features
(1) Very low ...
Description
Switching Diodes Silicon Epitaxial Planar
1SS307E
1. Applications
General-Purpose Rectifiers
2. Features
(1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
ESC
1SS307E
1: Cathode 2: Anode
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-12
2018-11-16 Rev.5.0
1SS307E
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
300
mA
Average rectified current
IO
100
Power dissipation
PD (Note 1)
150
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a glas...
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