CCD IMAGE SENSOR
KAF-1001
1024 (H) x 1024 (V) Full Frame CCD Image Sensor
Description
The KAF−1001 Image Sensor is a high-performance ch...
Description
KAF-1001
1024 (H) x 1024 (V) Full Frame CCD Image Sensor
Description
The KAF−1001 Image Sensor is a high-performance charge-coupled device (CCD) designed for a wide range of image sensing applications.
The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode.
Selectable on-chip output amplifiers allow operation to be optimized for different imaging needs: Low Noise (when using the high-sensitivity output) or Maximum Dynamic Range (when using the low-sensitivity output).
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD
Pixel Count
1024 (H) × 1024 (V)
Pixel Size
24 mm (H) × 24 mm (V)
Active Image Size
24.6 mm (H) × 24.6 mm (V) 34.8 mm (Diagonal) APS−H Optical Format
Chip Size
28.6 mm (H) × 25.5 mm (V)
Optical Fill-Factor
100%
Saturation Signal High Sensitivity Output High Dynamic Range
240,000 electrons 650,000 electrons
Output Sensitivity High Sensitivity Output High Dynamic Range
11 mV/electron 2 mV/electron
Readout Noise (1 MHz)
Dark Current (25°C, Accumulation Mode)
15 electrons rms < 30 pA/cm2
Dark Current Doubling Rate
5−6°C
Dynamic Range (Sat Sig/Dar Noise) High Sensitivity Output High Dynamic Range
83 dB 97 dB
Quant...
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