Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Feature...
Power
Transistors
2SD2057
Silicon
NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Features
q Incorporating a built-in damper diode q Reduction of a parts count and simplification of a circuit are al-
lowed q High breakdown voltage with high reliability q High-speed switching q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VEBO ICP IC IB
PC
1500 1500
7 20 5 4 100 3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A A
W
˚C ˚C
3.22.3 15.0±0.2 0.7
15.0±0.3 11.0±0.2
5.0±0.2 3.2
φ3.2±0.1
21.0±0.5
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
Solder Dip
16.2±0.5
5.45±0.3 10.9±0.5
123
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(b)
Internal Connection
C B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time (L-load) Fall time (L-load) Diode forward voltage
VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF
Conditions
min typ max Unit
VCB = 1000V, IE = 0 VCB = 1500V, IE = 0
30 µA 300 µA
IE = 500mA, I...
