DATA SHEET
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
DATA SHEET
SILICON
TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2402 is a
transistor featuring high current capacitance in small dimension. This
transistor is ideal for DC/DC converters and motor drivers.
FEATURES High current capacitance Low collector saturation voltage Complementary
transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse)
Base current (DC) Base current (pulse)
Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) IB(pulse)
PT Tj Tstg
Conditions
PW ≤ 10 ms duty cycle ≤ 50 % PW ≤ 10 ms duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board mounted
Ratings 50 30 6.0 5.0 8.0
0.2 0.4
2.0 150 −55 to +150
Unit V V V A A
A A
W °C °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16155EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
©
21090928
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage ...