DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this do...
DATA SHEET
SILICON
TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL
TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17972EJ4V0DS00 (4th edition) (Previous No. TC-1369B) Date Published March 2006 NS CP(K) Printed in Japan
c
1982
TYPICAL CHARACTERISTICS (TA = 25°C)
2SD1006, 1007
2 Data Sheet D17972EJ4V0DS
2SD1006, 1007
Data Sheet D17972EJ4V0DS
3
2SD1006, 1007
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