D1007

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17972EJ4V0DS00 (4th edition) (Previous No. TC-1369B) Date Published March 2006 NS CP(K) Printed in Japan c 1982 TYPICAL CHARACTERISTICS (TA = 25°C) 2SD1006, 1007 2 Data Sheet D17972EJ4V0DS 2SD1006, 1007 Data Sheet D17972EJ4V0DS 3 2SD1006, 1007 The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third partie...