2SK4123LS
www.DataSheet.co.kr
Ordering number : ENA0826
2SK4123LS
SANYO Semiconductors
DATA SHEET
2SK4123LS
N-Channel Silicon ...
Description
www.DataSheet.co.kr
Ordering number : ENA0826
2SK4123LS
SANYO Semiconductors
DATA SHEET
2SK4123LS
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 *1 Shows chip capability *2 Package limited *3 VDD=99V, L=2mH, IAV=18A *4 L≤2mH, single pulse Marking : K4123
Symbol VDSS VGSS IDc*1 IDpack*2
IDP
PD
Tch Tstg EAS IAV
Conditions
Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)
Ratings 450 ±30 18 12.4 66 2.0 40 150
--55 to +150 412 18
Unit V V A A A W W °C °C mJ A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain li...
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