SEMICONDUCTOR
TECHNICAL DATA
KTD1414
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTO...
SEMICONDUCTOR
TECHNICAL DATA
KTD1414
EPITAXIAL PLANAR
NPN TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 100 80 5 4 0.5 25 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
~_ 4.5KΩ
COLLECTOR
~_ 300Ω EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Saturation Voltage
Collector-Emitter Base-Emitter
ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE(sat)
TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A VCE=2V, IC=3A IC=3A, IB=6mA IC=3A, IB=6mA
Switching Time
Turn-on Time Storage Time Fall Time
ton 20µsec INPUT I B1
IB1
tstg 0
I B2
IB2
I B1 =-I B2 =6mA
tf DUTY CYCLE 1%
OUTPUT 10Ω
VCC =30V
MIN. 80
2000 10...