SiC10A120T

SiC10A120T SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-220AC  Marking: 10A120T Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-220AC Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 1200 1200 1200 27.5 15 10 75 58 UNITS V V V A A A A A February 4,2016-REV.00 Page 1 SiC10A120T Maximum Ratings PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak Forward Surge Current (TP=10uS, Pulse) Power Dissipation SYMBOL IFSM PD TEST CONDITIONS TC=25oC TC=125oC TC=25oC TC=25oC TC=125oC Operating Junction Temperature TJ Storage Temperature TSTG Thermal Resistance Junction to Case RθJC VALUE 108 98 383 123 41 175 -55 to 175 1.2 UNITS A A A W W oC oC oC/W Electrical Characteristics PARAMETER DC Blacking Voltage Forward Voltage Reverse Current ...