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MGF1601B-01

Part Number	MGF1601B-01
Manufacturer	Mitsubishi
Description	High-power GaAs FET
Published	Sep 5, 2016
Detailed Description	< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B...
Datasheet	MGF1601B-01 PDF File

Overview

< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.
15W non - matched DESCRIPTION The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
FEATURES  High linear power gain Glp=8.
0dB @f=8GHz  High P1dB P1dB=21.
8dBm(TYP.
) @f=8GHz APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  GG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID...

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MGF1601B-01 High-power GaAs FET - Mitsubishi

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