DatasheetsPDF.com
MTE013N08H8
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C161H8 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE013N08H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 80V 40A 10.5A 9.1 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ...
Cystech Electonics
Download MTE013N08H8 Datasheet
Similar Datasheet
MTE013N08E3
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTE013N08H8
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
