Document
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE011N10RJ3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V 48A
10.6A 10 mΩ(typ)
Symbol
MTE011N10RJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTE011N10RJ3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE011N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 4)
Continuous Drain Current @TA=70C, VGS=10V
(Note 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 5)
Single Pulse Avalanche Energy @ L=0.5mH, ID=40 Amps,
VDD=50V
(Note 5)
TC=25C
(Note 1)
Power Dissipation
TC=100C TA=25C
(Note 1) (Note 2)
TA=70C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS VGS ID
IDSM IDM IAS EAS
PD
PDSM Tj, Tstg
Limits
100 ±20 48 34 10.6 8.5 192 40
400
60 30 2.5 1.6 -55~+175
Unit
V
A
mJ W C/W
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC 2.5
Thermal Resistance, Junction-to-ambient, max (Note2) Thermal Resistance, Junction-to-ambient, max (Note4)
RθJA
50 C/W 110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V.
MTE011N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 3/ 9
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS ∆BVDSS/∆Tj
100 -
VGS(th)
2.0
*GFS
-
IGSS -
IDSS -
*RDS(ON)
-
Dynamic
*Qg -
*Qgs
-
*Qgd
-
*td(ON)
-
*tr -
*td(OFF)
-
*tf -
Ciss -
Coss
-
Crss -
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
74 14.5 10
42 13 11.9 26.8 21.6 50 10.8 2442 294 21
0.86 37 60
4.0 ±100 1 5 13
-
48 192 1.2
-
V mV/C
V S nA
μA
mΩ
VGS=0V, ID=250μA Reference to 25C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V
VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55C
VGS =10V, ID=11A
nC VDD=50V, ID=22A,VGS=10V
ns
VDD=50V, ID=11A, VGS=10V, RG=4.7Ω
pF VGS=0V, VDS=30V, f=1MHz
A
V IS=22A, VGS=0V
ns nC
VGS=0V, IF=22A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE011N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 4/ 9
Typical Characteristics
ID, Drain Current (A)
80 70 60 50 40 30 20 10 0
0
Typical Output Characteristics
10V, 9V, 8V 7V
VGS=5V
6V 5.5V
2468 VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current 100
VGS=6V
10 VGS=10V
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1
0.8
Tj=25°C
0.6 Tj=150°C
0.4
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State Resistanc e(mΩ)
RDS(on), Static Drain-Source OnState Resistance(mΩ)
1 0.1
1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
500
ID=11A
400
300
200
100
0
0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
0.2 0 2 4 6 8 10 12 14 16 18 20 IDR, Reverse Drain Current(A)
Drain-Source On-State .