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MTE011N10RJ3 Dataheets PDF



Part Number MTE011N10RJ3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE011N10RJ3 DatasheetMTE011N10RJ3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Orde.

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CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTE011N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE011N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 2/ 9 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 4) Continuous Drain Current @TA=70C, VGS=10V (Note 4) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 5) Single Pulse Avalanche Energy @ L=0.5mH, ID=40 Amps, VDD=50V (Note 5) TC=25C (Note 1) Power Dissipation TC=100C TA=25C (Note 1) (Note 2) TA=70C (Note 2) Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Limits 100 ±20 48 34 10.6 8.5 192 40 400 60 30 2.5 1.6 -55~+175 Unit V A mJ W C/W Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note2) Thermal Resistance, Junction-to-ambient, max (Note4) RθJA 50 C/W 110 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V. MTE011N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 3/ 9 Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj 100 - VGS(th) 2.0 *GFS - IGSS - IDSS - *RDS(ON) - Dynamic *Qg - *Qgs - *Qgd - *td(ON) - *tr - *td(OFF) - *tf - Ciss - Coss - Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - 74 14.5 10 42 13 11.9 26.8 21.6 50 10.8 2442 294 21 0.86 37 60 4.0 ±100 1 5 13 - 48 192 1.2 - V mV/C V S nA μA mΩ VGS=0V, ID=250μA Reference to 25C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55C VGS =10V, ID=11A nC VDD=50V, ID=22A,VGS=10V ns VDD=50V, ID=11A, VGS=10V, RG=4.7Ω pF VGS=0V, VDS=30V, f=1MHz A V IS=22A, VGS=0V ns nC VGS=0V, IF=22A, dIF/dt=100A/μs *Pulse Test : Pulse Width 300μs, Duty Cycle2% MTE011N10RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 4/ 9 Typical Characteristics ID, Drain Current (A) 80 70 60 50 40 30 20 10 0 0 Typical Output Characteristics 10V, 9V, 8V 7V VGS=5V 6V 5.5V 2468 VDS, Drain-Source Voltage(V) 10 Static Drain-Source On-State resistance vs Drain Current 100 VGS=6V 10 VGS=10V BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 0.8 Tj=25°C 0.6 Tj=150°C 0.4 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistanc e(mΩ) RDS(on), Static Drain-Source OnState Resistance(mΩ) 1 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 ID=11A 400 300 200 100 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance 0.2 0 2 4 6 8 10 12 14 16 18 20 IDR, Reverse Drain Current(A) Drain-Source On-State .


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