MTE010N10F3

CYStech Electronics Corp. Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit) RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package 100V 70A 9.6mΩ 10.1mΩ Symbol MTE010N10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE010N10F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE010N10F3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C (Note 2) Continuous Drain Current @ TA=70°C (Note 2) Avalanche Current (Note 3) Avalanche Energy @ L=100μH, ID=80A, RG=25Ω (Note 2) Repetitive Avalanche Energy@ L=0.1mH (Note 3) Power Dissip...