MTD07A04DH8

CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTD07A04DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=17A Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package 40V 40A 25.3A 9A 7.2A 6.7mΩ(typ) 8.7mΩ(typ) Equivalent Circuit MTD07A04DH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD07A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTD07A04DH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single...