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MTBA6C12H8

Part Number	MTBA6C12H8
Manufacturer	Cystech Electonics
Description	N- and P-channel enhancement mode power MOSFET
Features	• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package B...
Published	Sep 4, 2016
Datasheet	MTBA6C12H8 PDF File

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A ...

Similar Datasheet

MTBA6C12H8 N- and P-channel enhancement mode power MOSFET - Cystech Electonics
MTBA6C12J4 N & P-Channel Enhancement Mode Power MOSFET - CYStech
MTBA6C12Q8 N & P-Channel Enhancement Mode Power MOSFET - CYStech

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