MTB5D0P03H8

CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.1mΩ Symbol MTB5D0P03H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB5D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB5D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 2/ 9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V TC=25℃ (Note1) Total Power Dissipation TC=100℃ TA=25°C (Note1) (Note2) TA=7...