MTB5D0C03J4

CYStech Electronics Corp. Spec. No. : C704J4 Issued Date : 2016.06.02 Revised Date : 2016.06.03 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTB5D0C03J4 Features  Low Gate Charge  Simple Drive Requirement  RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 30V 8.6A 33.5A 6.7 mΩ 8.3 mΩ P-CH -30V -6.8A -26.5A 13.4 mΩ 20.1 mΩ Equivalent Circuit MTB5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source G2 S2 G1 S1 Absolute Maximum Ratings (TA=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TC=100C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TA=25C, VGS=10V(-10V) (Note4) Continuous Drain Current @ TA=70C, VGS=10V(-10V) (Note4) Pulsed Drain Current *1 (Note3) Single Pulse Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @L=1mH (Note5) Total Power Dissipation (TC=25℃) (Note1) Total Power Dissipation (TC=100℃) (Note1) Total Power Dissipation (TA=25℃) (Note2) Total Power Dissipation (TA=70℃) (Note2) Operating Junction and Storage Temperature Range Symbol Limits N-channel P-channel VDS 30 VGS ±20 -30 ±20 33.5 -26.5 21.2 -16.8 ID 8.6 -6.8 6.9 -5.4 IDM 134 -106 IAS 33.5 -26.5 EAS 128 128 25 PD 10 PDSM 2.4 1.7 Tj, Tstg -55~+150 Unit V A mJ W C MTB5D0C03J4 CYStek Product Specificat...