MTB50N10E3

CYStech Electronics Corp. Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB50N10E3 BVDSS Features Low Gate Charge Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ) Symbol MTB50N10E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTB50N10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB50N10E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=0.5mH, ID=24A, VDD=50V (Note 4) Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation (TC=...