MTB150N10J3

CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2016.06.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB150N10J3 BVDSS ID @ VGS=10V, TA=25°C 100V 2.3A ID @ VGS=10V, TC=25°C 7A RDSON(TYP) VGS=10V, ID=10A 163 mΩ VGS=4.5V, ID=10A 178 mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Equivalent Circuit MTB150N10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB150N10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB150N10J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Energy @ L=1mH, ID=7A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation Operating Junction and Storage Temperature Range TC=25℃ TC=100℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM EAS EAR PD PDSM ...