Document
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A
-80V -3.7A -2.9A 104mΩ 141mΩ
Features
• Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package • ESD protected gate
Equivalent Circuit
MTB110P08KN6
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
TC=25 °C, VGS=-10V
Continuous Drain Current
TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1)
TA=70 °C, VGS=-10V (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C TA=25 °C
(Note 1)
TA=70 °C
(Note 1)
Operating Junction Temperature and Storage Temperature Range
Symbol VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits -80 ±20 -3.7
-3.0
-2.9
-2.3 -20 3.2
2.1
2.0
1.25
-55~+150
Unit V A
W °C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
39
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit °C/W
MTB110P08KN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 2/8
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
-80 -
- V VGS=0V, ID=-250μA
ΔBVDSS/ΔTj - -0.08 - V/℃ Reference to 25℃, ID=-250μA
VGS(th)
-1.0 -
-2.5 V VDS=VGS, ID=-250μA
IGSS - - ±10
VGS=±20V, VDS=0V
IDSS
- - -1 μA VDS=-80V, VGS=0V
- - -10
VDS=-64V, VGS=0V, Tj=70℃
*RDS(ON)
-
104 141
135 185
mΩ
ID=-2A, VGS=-10V ID=-1A, VGS=-4.5V
*GFS
- 5.2
-
S VDS=-10V, ID=-2A
Dynamic
Ciss Coss Crss td(ON)
tr td(OFF)
tf Qg Qgs Qgd
- 537 - 52 - 37 - 7.4 - 17.4 - 36 - 24.8 - 7.4 - 2.2 - 3.2
-
pF VDS=-30V, VGS=0V, f=1MHz ns VDS=-40V, ID=-1A, VGS=-10V, RG=10Ω nC VDS=-40V, ID=-2A, VGS=-5V
Source-Drain Diode
*IS *ISM
-
-
-4 -16
A
*VSD
- -0.8 -1.2 V VGS=0V, IS=-2A
*Trr Qrr
- 14 - 9.5
-
ns nC
IF=-2A,VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTB110P08KN6-0-T1-G
Package
SOT-26 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
MTB110P08KN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 3/8
Typical Characteristics
-ID, Drain Current(A)
20 18 16 14 12 10 8 6 4 2 0
0
Typical Output Characteristics
10V
9V
8V 7V
5V
6V
-VGS=4V
-VGS=3.5V
-VGS=3V
1234 -VDS, Drain-Source Voltage(V)
5
-BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1.0
0.8
0.6 ID=-250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
Static Drain-Source On-State resistance vs Drain Current
200
180
160 VGS=-4.5V 140
120
100
80 VGS=-10V 60
40
20
0 0.01
0.1 1 -ID, Drain Current(A)
10
-VSD, Source-Drain Voltage(V)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1.0
Tj=25°C
0.8 0.6 Tj=150°C
0.4
0.2 0
2 46 8 -IDR, Reverse Drain Current(A)
10
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
Static Drain-Source On-State Resistance vs Gate-Source Voltage
1000 ID=-2A
800
600
400
200
0 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
Drain-Source On-State Resistance vs Junction Tempearture
2.0 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON)@Tj=25°C : 104mΩ typ 0.4
-75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTB110P08KN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 4/8
-VGS(th), Normalized Threshold Voltage
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2 ID=-1mA
1.0
Capacitance---(pF)
100 C oss
f=1MHz
Crss
10 0
5 10 15 20 25 -VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current 10
1
0.8
0.6 ID=-250μA
0.4
0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Gate Charge Characteristics 10
VDS=-16V 8
VDS=-40V 6
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
0.1 VDS=-10V Pulsed Ta=25°C
0.01 0.001
0.01 0.1
1
-ID, Drain Current(A)
10
Maximum Safe Operating Area 100
RDS(ON) 10 Limited
100μs 1m.