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MTB110P08KN6 Dataheets PDF



Part Number MTB110P08KN6
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MTB110P08KN6 DatasheetMTB110P08KN6 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A -80V -3.7A -2.9A 104mΩ 141mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package • ESD protected gate Equivalent Circuit MTB110P08KN6 G:Gate S:Source D:Drain Abso.

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CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A -80V -3.7A -2.9A 104mΩ 141mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package • ESD protected gate Equivalent Circuit MTB110P08KN6 G:Gate S:Source D:Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits -80 ±20 -3.7 -3.0 -2.9 -2.3 -20 3.2 2.1 2.0 1.25 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Thermal Resistance, Junction-to-case, max Rth,j-c 39 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62.5 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% Unit °C/W MTB110P08KN6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 2/8 Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -80 - - V VGS=0V, ID=-250μA ΔBVDSS/ΔTj - -0.08 - V/℃ Reference to 25℃, ID=-250μA VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ±10 VGS=±20V, VDS=0V IDSS - - -1 μA VDS=-80V, VGS=0V - - -10 VDS=-64V, VGS=0V, Tj=70℃ *RDS(ON) - 104 141 135 185 mΩ ID=-2A, VGS=-10V ID=-1A, VGS=-4.5V *GFS - 5.2 - S VDS=-10V, ID=-2A Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd - 537 - 52 - 37 - 7.4 - 17.4 - 36 - 24.8 - 7.4 - 2.2 - 3.2 - pF VDS=-30V, VGS=0V, f=1MHz ns VDS=-40V, ID=-1A, VGS=-10V, RG=10Ω nC VDS=-40V, ID=-2A, VGS=-5V Source-Drain Diode *IS *ISM - - -4 -16 A *VSD - -0.8 -1.2 V VGS=0V, IS=-2A *Trr Qrr - 14 - 9.5 - ns nC IF=-2A,VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTB110P08KN6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTB110P08KN6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 3/8 Typical Characteristics -ID, Drain Current(A) 20 18 16 14 12 10 8 6 4 2 0 0 Typical Output Characteristics 10V 9V 8V 7V 5V 6V -VGS=4V -VGS=3.5V -VGS=3V 1234 -VDS, Drain-Source Voltage(V) 5 -BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1.0 0.8 0.6 ID=-250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) Static Drain-Source On-State resistance vs Drain Current 200 180 160 VGS=-4.5V 140 120 100 80 VGS=-10V 60 40 20 0 0.01 0.1 1 -ID, Drain Current(A) 10 -VSD, Source-Drain Voltage(V) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0 2 46 8 -IDR, Reverse Drain Current(A) 10 RDS(ON), Static Drain-Source OnState Resistance(mΩ) Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 ID=-2A 800 600 400 200 0 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance Drain-Source On-State Resistance vs Junction Tempearture 2.0 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON)@Tj=25°C : 104mΩ typ 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTB110P08KN6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 4/8 -VGS(th), Normalized Threshold Voltage Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1000 Ciss Threshold Voltage vs Junction Tempearture 1.4 1.2 ID=-1mA 1.0 Capacitance---(pF) 100 C oss f=1MHz Crss 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) 30 Forward Transfer Admittance vs Drain Current 10 1 0.8 0.6 ID=-250μA 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Gate Charge Characteristics 10 VDS=-16V 8 VDS=-40V 6 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 0.1 VDS=-10V Pulsed Ta=25°C 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 Maximum Safe Operating Area 100 RDS(ON) 10 Limited 100μs 1m.


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