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MTB080P06N6

Cystech Electonics
Part Number MTB080P06N6
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Chann...
Datasheet PDF File MTB080P06N6 PDF File

MTB080P06N6
MTB080P06N6

Overview
CYStech Electronics Corp.
Spec.
No.
: C069N6 Issued Date : 2016.
03.
24 Revised Date : 2016.
04.
15 Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.
5V, TC=25°C ID@VGS=-4.
5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.
5V, ID=-2.
7A -60V -3.
8A -3.
0A 79mΩ 107mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Puls...


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