P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9
P-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A
-60V -2.5A
80mΩ 109mΩ
Features
Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTB080P06N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTB080P06N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V Pulsed Drain Current
TA=25°C TA=70°C
(Note 1&2)
Maximum Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature
Symbol VDS VGS
ID IDM
PD
Tj, Tstg
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 2/ 9
Limits -60 ±20
-2.5 (Note 3) -2 (Note 3) -10 1.25
0.8 -55~+150
Unit V
A
W °C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient , max (Note 3) Thermal Resistance, Junction-...
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