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MTB080P06M3

P-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halog...

Cystech Electonics

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