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MTB080C10Q8 Dataheets PDF



Part Number MTB080C10Q8
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N- and P-channel enhancement mode power MOSFET
Datasheet MTB080C10Q8 DatasheetMTB080C10Q8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 1/12 N- and P-channel enhancement mode power MOSFET MTB080C10Q8 BVDSS ID@VGS=10V(-10V), TA=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 100V 2.9A 74mΩ 90mΩ P-CH -100V -1.9A 174mΩ 195mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080C10Q8 Outline SOP-8 D2 D2 D1 D1 G:Gate S:Sour.

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CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 1/12 N- and P-channel enhancement mode power MOSFET MTB080C10Q8 BVDSS ID@VGS=10V(-10V), TA=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 100V 2.9A 74mΩ 90mΩ P-CH -100V -1.9A 174mΩ 195mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080C10Q8 Outline SOP-8 D2 D2 D1 D1 G:Gate S:Source D:Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTB080C10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080C10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 2/12 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 2) Continuous Drain Current @TA=70 °C (Note 2) Pulsed Drain Current (Note 1) Power Dissipation for Dual Operation Power Dissipation for Single Operation Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID IDM PD Tj; Tstg Limits N-channel P-channel 100 -100 ±20 ±20 2.9 -1.9 2.3 -1.5 12 -8 2 1.6 (Note 2) 0.9 (Note 3) -55~+150 Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. Value 40 78 (Note 2) 135 (Note 3) Unit °C/W N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) 100 1.0 - 2.5 V VGS=0V, ID=250μA VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 10 μA VDS=80V, VGS=0V VDS=80V, VGS=0V, Tj=55°C *RDS(ON) - 74 90 96 120 mΩ VGS=10V, ID=3A VGS=4.5V, ID=3A *GFS - 5.9 - S VDS=10V, ID=3A Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf - 333 - - 47 - pF VDS=50V, VGS=0V, f=1MHz - 18 - - 6.2 9.3 - 17.4 18.2 25.8 27.3 ns VDS=50V, ID=1A, VGS=10V, RG=3Ω - 6.8 10.2 MTB080C10Q8 CYStek Product Specification *Qg *Qgs *Qgd - Source-Drain Diode *VSD - *IS - *ISM - CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 3/12 8 12 1.5 - nC VDS=80V, ID=2.9A, VGS=10V 3.1 - 0.75 1.2 - 2.1 - 8.4 V VGS=0V, IS=1A A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS .


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