Document
CYStech Electronics Corp.
Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 1/12
N- and P-channel enhancement mode power MOSFET
MTB080C10Q8 BVDSS
ID@VGS=10V(-10V), TA=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH 100V 2.9A
74mΩ
90mΩ
P-CH -100V -1.9A
174mΩ
195mΩ
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080C10Q8
Outline
SOP-8
D2 D2 D1 D1
G:Gate S:Source D:Drain
Pin 1
G2 S2 G1 S1
Ordering Information
Device
MTB080C10Q8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB080C10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 2) Continuous Drain Current @TA=70 °C (Note 2) Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol BVDSS
VGS ID IDM
PD
Tj; Tstg
Limits
N-channel P-channel 100 -100 ±20 ±20 2.9 -1.9 2.3 -1.5 12 -8
2 1.6 (Note 2) 0.9 (Note 3)
-55~+150
Unit V A
W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol RθJC
RθJA
Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
Value 40 78 (Note 2)
135 (Note 3)
Unit °C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
100 1.0
-
2.5
V
VGS=0V, ID=250μA VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
1 10
μA
VDS=80V, VGS=0V VDS=80V, VGS=0V, Tj=55°C
*RDS(ON)
-
74 90
96 120
mΩ
VGS=10V, ID=3A VGS=4.5V, ID=3A
*GFS
- 5.9 - S VDS=10V, ID=3A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf
- 333 -
- 47 - pF VDS=50V, VGS=0V, f=1MHz
- 18 -
- 6.2 9.3
-
17.4 18.2
25.8 27.3
ns VDS=50V, ID=1A, VGS=10V, RG=3Ω
- 6.8 10.2
MTB080C10Q8
CYStek Product Specification
*Qg *Qgs *Qgd
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
CYStech Electronics Corp.
Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 3/12
8 12 1.5 - nC VDS=80V, ID=2.9A, VGS=10V
3.1 -
0.75 1.2 - 2.1 - 8.4
V VGS=0V, IS=1A A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static BVDSS VGS(th) IGSS
IDSS
*RDS(ON)
*GFS
.