MTB050N15J3

CYStech Electronics Corp. Spec. No. : C979J3 Issued Date : 2014.08.14 Revised Date : 2015.03.02 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB050N15J3 BVDSS ID @VGS=10V 150V 20A RDS(ON)@VGS=10V, ID=15A 47.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 47.5mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTB050N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB050N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050N15J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=12mH, ID=9.8A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Diss...