DatasheetsPDF.com

MTB020N03E3

N-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB020N03E3 BVDSS ID@VGS=10V, TC=25°C Features RDS(ON)@VGS=10V, ID=20A Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS ...

Cystech Electonics

Download MTB020N03E3 Datasheet

Similar Datasheet

MTB020N03E3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KJ3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KL3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KM3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KN3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KN6 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03KQ8 N-Channel Enhancement Mode MOSFET - Cystech Electonics
MTB020N03KV8 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB020N03V8 N-Channel Enhancement Mode Power MOSFET - CYStech

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)