MTB020N03KM3

CYStech Electronics Corp. 30V N-Channel Enhancement Mode MOSFET MTB020N03KM3 Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9 Features Simple drive requirement Small package outline ESD protected gate Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=4.5V, ID=4A 30V 7A 15.3mΩ(typ) 19.4mΩ(typ) Symbol MTB020N03KM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Ordering Information Device MTB020N03KM3-0-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name MTB020N03KM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 30 ±20 7 5.6 42 2 0.016 -55~+150 Unit V A W W/°C °C Thermal Performance Parameter Symbol Limit Thermal Resistance, Junction-to...