N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTB020N03KM3
Spec. No. : C143M3 Issued Date : 2016.01.2...
Description
CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTB020N03KM3
Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9
Features
Simple drive requirement Small package outline ESD protected gate Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=5A
RDSON@VGS=4.5V, ID=4A
30V 7A 15.3mΩ(typ)
19.4mΩ(typ)
Symbol
MTB020N03KM3
Outline
SOT-89
G:Gate S:Source D:Drain
GD D S
Ordering Information
Device MTB020N03KM3-0-T2-G
Package
Shipping
SOT-89 (Pb-free lead plating and halogen-free package)
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products
Product name
MTB020N03KM3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM PD
Tj ; Tstg
Limits 30 ±20 7 5.6 42
2
0.016 -55~+150
Unit V
A
W W/°C
°C
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to...
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