MTB020A03KV8

CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.06.13 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode MOSFET MTB020A03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON@VGS=10V typ. RDSON@VGS=4.5V typ. 30V 6.6A 12A 15.2 mΩ 20.1 mΩ Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTB020A03KV8 Outline D2 D2 D1 D1 DFN3×3 D1 D1 D2 D2 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 S1 G1 S2 G2 Ordering Information Device MTB020A03KV8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB020A03KV8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage VGS Continuous Drain Current *2 TA=25 °C, VGS=10V TA=70 °C, VGS=10V IDSM Continuous Drain Current TC=25 °C, VGS=10V TC=100 °C, VGS=10V ID Pulsed Drain Current * 3 IDM TA=25°C, Single device operation Total Power Dissipation TA=70°C, Single device operation TA=25°C,Single device value at dual operation TA=70°C,Single device value at dual operation PDSM TC=25°C TC=100°C PD * 1 ...