-14V P-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C101S3 Issued Date : 2016.06.07
Revised Date : Page No. : 1/9
-14V P-Channel Enh...
Description
CYStech Electronics Corp.
Spec. No. : C101S3 Issued Date : 2016.06.07
Revised Date : Page No. : 1/9
-14V P-Channel Enhancement Mode MOSFET
MTA050P01S3
BVDSS ID @ VGS=-10V, TA=25°C
RDSON@VGS=-4.5V, ID=-1.7A
RDSON@VGS=-2.5V, ID=-1.7A
Features
Low gate charge Compact and low profile SOT-323 package
RDSON@VGS=-1.8V, ID=-1A RDSON@VGS=-1.5V, ID=-1A
Advanced trench process technology High density cell design for ultra low on resistance
Pb-free lead plating package
-14V -1.7A
66mΩ(typ) 86mΩ(typ) 121mΩ(typ) 181mΩ(typ)
Symbol
MTA050P01S3
Outline
SOT-323
D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTA050P01S3-0-T1-G
Package
SOT-323 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
MTA050P01S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C101S3 Issued Date : 2016.06.07
Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=-4.5V (Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation
(Note 3)
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj ; Tstg
Limits -14
±8
-1.7 -1.4 -6.8 ...
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